Interface Roughness Effects and Relaxation Dynamics of an Amorphous Semiconductor Oxide-based Analog Resistance Switching Memory
نویسندگان
چکیده
The analog resistive switching properties of amorphous InGaZnO x ( a -IGZO)-based devices with Al as the top and bottom electrodes an Al-O interface layer inserted on electrode are presented...
منابع مشابه
Effects of interface roughness and conducting filaments in metal–oxide–semiconductor tunnel structures
The current–voltage characteristics of n poly-Si/SiO2 /p-Si tunnel structures containing nonuniform ultrathin oxide layers are studied using three-dimensional quantum mechanical scattering calculations. We find that, in general, roughness at the Si/SiO2 interface renders the oxide layer more permeable. In the direct-tunneling regime, interface roughness induces lateral localization of wave func...
متن کاملInfluence of Interface Thermal Resistance on Relaxation Dynamics of Metal-Dielectric Nanocomposite Materials under Ultrafast Pulse Laser Excitation
Nanocomposite materials, including noble metal nanoparticles embedded in a dielectric host medium, are interesting because of their optical properties linked to surface plasmon resonance phenomena. For studding of nonlinear optical properties and/or energy transfer process, these materials may be excited by ultrashort pulse laser with a temporal width varying from some femtoseconds to some hund...
متن کاملAnalog and Digital Switching Characteristics of Transition Metal Oxide Based Resistive Random Access Memory (ReRAM) Devices
Transition Metal Oxide (TMO) Based Resistive Random Access Memory (ReRAM) devices have gathered significant research attention for non-volatile data storage applications. The major advantages lie in terms of scalability, low switching voltages, and process compatibility with the CMOS technologies [1, 2]. However, to take the complete benefit of this enabling technology there are several challen...
متن کاملMetallization strategies for In2O3-based amorphous oxide semiconductor materials
Amorphous oxide semiconductors based on indium oxide [e.g., In–Zn–O (IZO) and In–Ga–Zn–O (IGZO)] are of interest for use in thin-film transistor (TFT) applications. We report that the stability of amorphous In–Zn–O (a-IZO) used in TFT applications depends, in part, on the metallization materials used to form the source and drain contacts. A thermodynamics-based approach to the selection of IZO ...
متن کاملNonvolatile resistive switching memory based on amorphous carbon
Resistive memory effect has been found in carbon nanostructure-based devices by Standley et al. Nano Lett. 8, 3345 2008 . Compared to nanostructures, hydrogenated amorphous carbon a-C:H has much more controllable preparation processes. Study on a-C:H-based memory is of great significance to applications of carbon-based electronic devices. We observed nonvolatile resistance memory behaviors in m...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nanoscale
سال: 2023
ISSN: ['2040-3372', '2040-3364']
DOI: https://doi.org/10.1039/d3nr02591h